FIELD: chemistry.
SUBSTANCE: invention can be used in production of monocrystals of decomposable semiconductor compounds A3B5 via Czochralski method, particularly when growing monocrystals of phosphides of gallium and indium and gallium arsenide from under a boric anhydride layer. A3B5 monocrystals are obtained by drawing from melt to a nucleating agent under a boric anhydride layer which is loaded into a container, heated and melted. Molten boric anhydride is held for 0.5-3 hours at 900-1200°C with axial temperature gradient of 5-40°C/cm and addition of gallium in amount of 0.8-3.0 % of the weight of boric anhydride. Sullage is removed from the surface of the melt and volatile impurities are removed through ventilation. Vacuum pumping is then carried out for 0.5-20 hours at 950-1250°C. Boric anhydride is removed from the container and cooled. Addition of bismuth in amount of 0.01-0.5% of the weight of boric anhydride is proposed when melting boric anhydride together with gallium. Boric anhydride can be obtained by using boric acid, a portion of which is put into a container in amount of 10-20% of the load weight and dehydrated. Gallium is then added in amount of 0.4-1.5% of the weight of boric acid, after which the remaining portion of boric acid and molten boric anhydride is held for 0.5-2 hours before vacuum pumping. When removing boric anhydride from the container, all the gallium and a portion of boric anhydride in amount of 50-300% of the weight of the initial gallium can be left. Boric anhydride is then loaded again and the process is repeated. The obtained boric anhydride and A3B5 compound are loaded into a crucible and heated and a monocrystal is grown on a nucleating agent from the melt.
EFFECT: high output of suitable and improved quality of monocrystals for optical devices and production of ultra bright light-emitting diodes owing to lower content of impurities in the boric anhydride and molten A3B5 compound.
4 cl, 3 ex, 2 tbl
Title | Year | Author | Number |
---|---|---|---|
METHOD OF SINGLE CRYSTAL GROWTH FOR SEMICONDUCTORS OF TYPE AB | 2006 |
|
RU2327824C1 |
METHOD OF PRODUCING INDIUM PHOSPHIDE MONOCRYSTALS | 2010 |
|
RU2462541C2 |
METHOD OF PRODUCING SINGLE CRYSTALS OF GALLIUM PHOSPHIDE | 0 |
|
SU1701758A1 |
METHOD OF GROWING SEMICONDUCTOR CRYSTALS | 1990 |
|
RU2023770C1 |
USING AMOSOV METHOD FOR GROWING MONOCRYSTALS FROM MELT | 2004 |
|
RU2261297C1 |
METHOD OF PRODUCING GALLIUM ARSENIDE (GAAS) MONOCRYSTALS | 2023 |
|
RU2818932C1 |
METHOD FOR GROWING SINGLE CRYSTALS | 1991 |
|
RU2035530C1 |
METHOD FOR PRODUCTION OF MONOCRYSTALS OF GALLIUM ARSENIDE | 1990 |
|
SU1824956A1 |
METHOD FOR PRODUCTION OF INDIUM AMMONIDE LARGE-SIZE MONOCRYSTALS | 2012 |
|
RU2482228C1 |
SUBSTRATE FOR GROWING OF EPITAXIAL LAYERS OF GALLIUM NITRIDE | 2007 |
|
RU2369669C2 |
Authors
Dates
2010-09-27—Published
2009-04-10—Filed