FIELD: electrical engineering.
SUBSTANCE: invention relates to the vacuum SHF microelectronics, namely, to the measurement of characteristics of the SHF energy local film absorbers on the SHF amplifying device reference dielectric rods. Disclosed is the electromagnetic wave in the SHF devices with long-term interaction slowing structures film local absorbers differential attenuation discrete measurement method. In the local absorber differential attenuation measuring process, dielectric rod with local absorber moves with the constant pitch along the mandrel, which is the homogeneous slowing system, to one end of which the continuous SHF signal is supplied, and from the slowing structure other end the attenuated SHF signal is supplied to the attenuation meter input. Rod with the local absorber displacement along the mandrel causes a change in the attenuation value introduced into the slowing system by the local absorber, which allows to determine the local absorber attenuation distribution integral function. This function derivative is the desired differential attenuation. In addition, during the measurement, the dielectric rod with local absorber can move with variable pitch, and the measurements can be made for the case of pulsed or modulated SHF signal.
EFFECT: technical result is increase in the local absorber differential attenuation measurements accuracy.
3 cl, 5 dwg
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Authors
Dates
2018-08-29—Published
2017-08-07—Filed