CURRENT SENSOR Russian patent published in 2019 - IPC G01R19/00 

Abstract RU 2690710 C2

FIELD: physics.

SUBSTANCE: group of inventions relates to a current sensor. Two transducer chips accommodate corresponding magnetoelectric transducers. Said two sensor chips are located in gap, wherein two sensor chips are arranged such that direction of magnetic induction relative to each of two sensors of sensor is same, as well as perpendicular direction relative to end surfaces of core for trapping magnetic field, wherein end surfaces face the gap and two sensor chips are arranged axisymmetrically relative to straight line passing through gap centre.

EFFECT: technical result is possibility of sensor failure detection.

4 cl, 8 dwg

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RU 2 690 710 C2

Authors

Nakayama Wataru

Dates

2019-06-05Published

2017-10-09Filed