FIELD: chemistry; physics.
SUBSTANCE: invention relates to chemical, semiconductor and optical industry and can be used in making quartz glass, optics, light guides. Quartz grains are treated in a heated to a temperature of not less than 1,000 °C reactor in presence of air by supplying gaseous hydrogen chloride therein. Rotary reactor is used with horizontally oriented central axis inclined at angle of not more than 10 degrees. Flow of cleaned grains of quartz is fed into reactor continuously while mixing. Hydrogen chloride is fed through a unit for unloading of purified grains of quartz at a rate of not less than 80 l/h with continuous forced evacuation of formed gaseous chlorination products at a rate of not less than 2,500 l/h through a unit for loading cleaned grains of quartz. Purified quartz grains are obtained with content of the following pollutant elements, 1x10-7 wt%: iron – less than 100, sodium – less than 100, copper – less than 1, chromium – less than 1, nickel – less than 1, vanadium – less than 10, molybdenum – less than 10, cobalt – less than 10, manganese – less than 1.
EFFECT: invention enables to obtain a finished product, which satisfies queries of semiconductor industry and production of light guides based on purity indices, and reduces time for purifying quartz grains.
2 cl, 4 dwg, 1 tbl
