METHOD FOR LOCALIZATION OF SOURCES OF HIGH EMISSION OF CONDUCTED INTERFERENCE OF A CABINET OF A COMPLETE DEVICE AND A DEVICE FOR ITS IMPLEMENTATION Russian patent published in 2019 - IPC H02H7/22 

FIELD: electrical equipment.

SUBSTANCE: use in the field of electrical engineering and power engineering. Method for localization of sources of high emission of conducted interference in a cabinet of a complete device consists in the fact that voltage of noise emission is measured in power supply circuit of a cabinet of a complete device and frequency regions are determined, where the measured voltage of the noise emission exceeds the specified limits, reducing impedance of the power supply circuit of the complete device cabinet relative to its housing, currents of noise emission are measured in power supply circuits of functional units of the cabinet of the complete device, measured currents of the noise emission are compared by level in the frequency range, where the measured voltage of the noise emission exceeds the specified limits, and the location of the functional units which initiate high voltage of the noise emission in the power circuit of the cabinet of the complete device is localized in the cabinet of the complete device. Total resistance of the power supply circuit of the cabinet of the complete device is reduced with respect to its housing at least by 10 dB below the impedance of the equivalent power supply network.

EFFECT: high reliability of localization of sources of high emission of conductive interference and wider field of application.

3 cl, 5 dwg