METHOD FOR LOCALIZATION OF SOURCES OF HIGH EMISSION OF CONDUCTED INTERFERENCE OF A CABINET OF A COMPLETE DEVICE AND A DEVICE FOR ITS IMPLEMENTATION Russian patent published in 2019 - IPC H02H7/22 

FIELD: electrical equipment.

SUBSTANCE: use in the field of electrical engineering and power engineering. Method for localization of sources of high emission of conducted interference in a cabinet of a complete device consists in the fact that voltage of noise emission is measured in power supply circuit of a cabinet of a complete device and frequency regions are determined, where the measured noise of the noise emission exceeds the specified limits. At that currents of noise emission are measured in power supply circuits of functional blocks of a cabinet of a complete device, measured currents of noise emission are compared by level in frequency regions, where voltage of noise emission in power supply circuit of a cabinet of a complete device exceeds established limits, and localizing the functional units of the cabinet of the complete device with the highest levels of the noise emission current in said frequency regions as sources of excess voltage of the noise emission of the cabinet of the set device of the specified limits.

EFFECT: high reliability of locating a source of high emission of conductive interference and wider field of use.

2 cl, 4 dwg