CORRECTION OF COMMUNICATION LINE ERRORS IN A MEMORY SYSTEM Russian patent published in 2020 - IPC G06F11/10 H03M13/31 

Abstract RU 2710977 C1

FIELD: information technology.

SUBSTANCE: group of inventions relates to memory systems and can be used to correct errors in memory systems. Device comprises a memory bank; a memory side decoder configured to detect whether the recording data has an error based on the write protection code; a memory side encoder configured to generate a reading protection code based on reading data extracted from the memory bank; communication line comprises a plurality of data lines (DQ), a data mask line (DM) for use in masking recording operations and a read strobe synchronization line for use by a storage device to provide timing during reading operations and a storage device side interface configured to receive recording data and send read data on a plurality of DQ lines, receive the write protection code along the reading strobe synchronization line and send the reading protection code along the DM line.

EFFECT: improved reliability of data protection.

17 cl, 12 dwg

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RU 2 710 977 C1

Authors

Suh, Jungwon

Dates

2020-01-14Published

2017-07-07Filed