DEVICES AND METHODS FOR DETECTING DETERIORATION OF SEMICONDUCTOR DEVICES DUE TO RADIATION EFFECTS THEREON Russian patent published in 2020 - IPC G01T1/24 

FIELD: measurement technology.

SUBSTANCE: use: to detect deterioration of state due to radiation. Essence of the invention is that the method for detecting chain failure due to radiation includes: determining current of the semiconductor device in the analog circuit; determining the amount of radiation affecting the semiconductor device based on current; comparing the amount of radiation with the radiation dose threshold value; indication of deterioration of semiconductor device based on comparison; and direction based on comparison of warning about possible deterioration of state to operator workstation.

EFFECT: possibility of detecting deterioration of state due to exposure to radiation before it negatively affects measurement data.

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