FIELD: technological processes.
SUBSTANCE: invention relates to processing of semiconductor thermoelectric materials and can be used in designing high-efficiency thermoelectric generator batteries and cooling devices. Essence of the invention consists in the fact that increase in the Q-factor and simplification of the thermoelectric material manufacturing technology is achieved by photon treatment of the surface of hot-pressed material in the inert gas medium by packs of pulses of xenon lamp radiation with pulse duration of 10-2 s during 1.0–1.4 s at energy density of radiation coming to surface of semiconductor in range of 125–175 J⋅cm-2.
EFFECT: high Q-factor of thermoelectric material of n-type conductivity based on Bi2Te3-Bi2Se3 solid solutions by 8 %, reduction of temperature effect on material, as well as reduction of treatment time due to irradiation of its surface with radiation of xenon lamps.
1 cl, 3 dwg
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Authors
Dates
2020-07-17—Published
2019-10-21—Filed