METHOD FOR SYNTHESISING NANOCRYSTALLINE SILICON CARBIDE FILMS ON A SILICON SUBSTRATE Russian patent published in 2023 - IPC H01L21/26 B82B3/00 

FIELD: semiconductors.

SUBSTANCE: invention relates to the technology of producing semiconductor materials and can be used in creating semiconductor apparatus (UV photodetectors, light-emitting diodes, temperature and pressure sensors). The substance of the invention consists in a method for synthesising nanocrystalline silicon carbide films of a given thickness in the range of 0.1 to 1.2 mcm on a Si substrate, said method including the creation of multilayer periodic Si/C/…Si/C heterostructures on a substrate by ion beam sputtering followed by annealing by photon processing in order to activate solid-phase synthesis. Pulse xenon lamps with a 0.2 to 1.2 mcm radiation range are used as an incoherent light source. The silicon substrate with the multilayer heterostructure applied is processed by pulse packets with a duration of 10^-2 sec for 1.5 to 3 sec; the energy density of radiation received by the sample is 240 to 284 J·cm^-2.

EFFECT: creation of a nanocrystalline silicon carbide film of a given thickness on a silicon substrate with the advantages of reduced synthesis time due to the activation of solid-phase synthesis by photonic treatment with xenon lamp radiation.

1 cl, 2 dwg