INSTALLATION OF ULTRASONIC MICROWELDING Russian patent published in 2021 - IPC B23K20/10 B23K37/02 

Abstract RU 2742635 C1

FIELD: ultrasonic microwelding.

SUBSTANCE: invention relates to an installation for ultrasonic microwelding. The body with a U-shaped bearing base is mounted on a base plate. The welding head includes a holder for an ultrasonic transducer with a welding tool for ultrasonic welding fixed therein and a two-arm lever mounted in centers coaxial to each other. The installation also contains a mechanism for vertical and horizontal movement, a wire clamping unit with jaws, an optical head, a manipulator for moving the device to be welded, a mounting heated table, an ultrasonic generator and a current source. A contact electrode fixed in the holder is installed next to the welding tool. The working end of the contact electrode is spaced from the working end of the welding tool along the Z axis by an amount not less than the value of the upsetting of the conductor during welding. The contact electrode has the ability to move relative to the welding tool along the X, Y, Z axes, and the ability to set an adjustable static pressure on the conductor during welding. The contact electrode holder is fixed on an additional two-arm lever and is electrically isolated from the unit body. The holder of the ultrasonic transducer and the holder of the contact electrode are electrically connected to the outputs of the current source, and the area of ​​the contact surface of the working end of the contact electrode is greater than the area of ​​the contact surface of the working end of the welding tool.

EFFECT: technical result consists in expanding technological capabilities by providing the simultaneous supply of an electrical contact with the help of an electrode to the wire guide or to the contact pad of the device, as well as to the ultrasonic tool, and passing a welding current through them, which leads to the activation of ultrasonic welding by heating the welding zone electric current, in addition, in the manufacture of semiconductor devices, the thickness of the contact pads made of precious metals decreases.

1 cl, 5 dwg

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RU 2 742 635 C1

Authors

Poduvaltsev Aleksandr Vladimirovich

Sizov Viacheslav Gennadevich

Poduvaltsev Aleksei Aleksandrovich

Dates

2021-02-09Published

2020-09-04Filed