FIELD: chemistry.
SUBSTANCE: invention relates to a method of crystallization of compounds contained in the gaseous state in the composition of high-temperature fumarole volcanic gases, including rhenium, indium, germanium and the platinum group of metals, on copper elements. The method of crystallization of compounds contained in the gaseous state in the composition of high-temperature fumarole volcanic gases on a free-form substrate made of cathode and/or cast copper includes placing one or more substrate in a fire-proof chamber having internal through channel, which provides gas flow so that substrates, fixed on suspension system of fire-proof silica cords, do not contact to internal walls of the fire-proof chamber, a fumarole area surface and a fire-proof cover placed in the upper part of the chamber. The chamber with copper substrates fixed on it is set on the high-temperature fumarole area having temperature from 200ºC to 950ºC with a high-temperature fumarole gas debit from 1 to 15 m/s. The upper part of the chamber set on the fumarole area is covered with the fire-proof cover including a valve designed to the withdrawal of the fumarole gas went through the inner cavity of the chamber. The copper substrates are held in the chamber under high-temperature fumarole gases with following withdrawal of substrates with the crystalline mass that has grown on their surface containing indium, germanium, rhenium, platinum and palladium.
EFFECT: invention is aimed at producing on copper substrates crystal outgrowth of rare metal and noble inclusions of Re, In, Ge, Pd, and Pt, the concentration of which is not inferior to industrial values.
3 cl, 1 tbl, 8 dwg
