METHOD FOR HETEROSTRUCTURE MANUFACTURE Russian patent published in 2007 - IPC H01L21/324 

FIELD: semiconductor technology.

SUBSTANCE: proposed method for heterostructure manufacture includes implantation of ions on surface whereon amorphous layer is formed in advance, implantation of slightly soluble ions and easily segregating admixtures or slightly soluble and easily segregating admixtures in substrate amorphous layer under implantation conditions affording implanted admixture concentration exceeding theoretically possible solubility limit and leading to formation of semiconductor epitaxial layer of at least one single layer thickness, as well as implantation of hydrogen into semiconductor wafer to form intercepted semiconductor layer; then intercepted semiconductor layer is formed on substrate incorporating amorphous layer on its working surface under conditions ensuring its hydrogen-induced transfer from semiconductor wafer, this being followed by baking under conditions affording segregation of admixture implanted in substrate amorphous layer to intercepted semiconductor layer-amorphous layer interface and epitaxial growth of single-crystalline semiconductor layer of implanted admixture or compounds of implanted admixtures on mentioned interface.

EFFECT: enlarged functional capabilities.

17 cl, 2 dwg