FIELD: measuring equipment.
SUBSTANCE: invention relates to measurement technology and can be used for non-destructive testing of the electrical resistivity of semiconductor crystal materials, in particular germanium single crystals. In the method according to the invention, the sample is placed on a substrate that shields electromagnetic radiation from the heating element, quickly heated, its thermal image is recorded, reference points with the minimum and maximum temperature of the sample are determined, electrical resistance is measured at these points by the four-probe method, temperature profiles are built and based on them using the proposed formula.
EFFECT: invention makes it possible to control the distribution of the resistivity of semiconductor materials more accurately with minimal damage to the sample surface.
1 cl, 4 dwg
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