FIELD: measuring.
SUBSTANCE: invention relates to tools for controlling the parameters of semiconductor materials. Method for non-destructive testing of the characteristics of alloyed layers of semiconductor structures includes the stages of measuring the surface resistance of the alloyed layer by the four-probe method; determining the IR spectra of reflection from the surface of the silicon wafers; finding the minimum on the spectral dependence of the reflection coefficient; calculating the dopant concentration on the surface of the alloyed layer by empirical formulas and calculating the laying depth of the p-n junction according to the calculation formula proposed herein.
EFFECT: relatively simple and reliable method for non-destructive testing of the characteristics of alloyed layers of semiconductor structures.
1 cl, 1 tbl
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