FIELD: quantum electronics devices.
SUBSTANCE: invention relates to devices of quantum electronics, which are sources of high-power laser radiation. The substance of the invention lies in the fact that in the laser head with diode pumping of the active medium, a scheme is implemented that is longitudinal relative to the optical axis of the pump laser. The active medium is pumped by the radiation of laser diodes located at the surfaces of a pair of disks rotating in opposite directions. These surfaces have coatings that are antireflective for laser radiation, and coatings on the surfaces of the discs located at a distance from the laser diodes reflect the pumping radiation in the direction of the material of each of the disks. As a result, a quasi-uniform distribution of the inverse population is created in the working area, which provides an increase in the laser radiation energy and contributes to an increase in its quality.
EFFECT: making the surfaces of the disks non-parallel prevents the uncontrolled development of generation of laser radiation in the volume of the disks and increases the power of the output laser radiation, and the envisaged difference in the shape of the pump currents of the laser diodes makes it possible to form an inverted population distribution approaching quasi-uniform and symmetric with respect to the optical axis of the laser head.
4 cl, 3 dwg
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Authors
Dates
2021-12-28—Published
2021-05-28—Filed