METHOD FOR PRODUCING A THERMOELECTRIC MATERIAL BASED ON BISMUTH TELLURIDE Russian patent published in 2022 - IPC H01L35/16 H01L35/34 

FIELD: chemistry.

SUBSTANCE: invention relates to the technology for producing a semiconductor low-temperature thermoelectric material of the electronic type of conductivity and can be used in creating highly efficient thermoelectric generator and cooling modules. Substance: the method is characterised by the fact that a Bi₂Te_2.7Se_0.3 material is doped with indium at the stage of solvothermal microwave synthesis. For this purpose, a solution of bismuth oxide Bi₂O₃ in ethylene glycol containing KOH in the ratio of 1 g of alkali per 16 ml of ethylene glycol is mixed with a solution produced by dissolving tellurium oxide and sodium hydroselenite in ethylene glycol, containing alkali as calculated for 1 g KOH per 80 ml of ethylene glycol at the temperature of the solution of 80 to 100 C. Then indium nitrate is added to the resulting mixture in a stoichiometric ratio in accordance with the formula Bi_2-xIn_xTe_2.7Se_0.3, wherein x = 0.01, or 0.04, or 0.05, and sustained at the temperature of 90°C for 1 h until a clear yellowish solution is obtained, subsequently subjected to solvothermal microwave synthesis for 5 min at a temperature of 185°C. The Bi_2-xIn_xTe_2.7Se_0.3 powder suspension, wherein x = 0.01, or 0.04, or 0.05, is cooled naturally to room temperature. Then the powder is separated by centrifugation, washed 3 times with isopropyl alcohol, 1 time with acetone. Dried in a vacuum drying cabinet at a temperature of 100°C for an hour and compacted in a graphite mould by spark plasma sintering at a temperature of 400°C and a pressure of 40 MPa for 2 min.

EFFECT: production of a semiconductor low-temperature thermoelectric material suitable for use in thermoelectric generator and cooling modules.

1 cl, 3 dwg, 1 tbl