METHOD FOR MANUFACTURING A CHEMICALLY AND THERMALLY STABLE METAL ABSORBING STRUCTURE OF TUNGSTEN ON A SILICATE SUBSTRATE Russian patent published in 2022 - IPC H01L21/285 B82Y40/00 

FIELD: semiconductor industry.

SUBSTANCE: invention relates to methods for manufacturing nanoscale structures on a solid for semiconductor devices. A method is proposed for manufacturing a chemically and thermally stable metal absorbing structure of tungsten on a silicate substrate, including the creation of a nanoscale structure of layers containing at least a sublayer of an adhesive promoter, a thin film of tungsten, as well as a barrier layer adjacent to it on at least one side consisting of substoichiometric aluminum nitride. At the same time, the creation of a layer structure is carried out by the method for gas-phase deposition of the corresponding materials on a silicate substrate at reduced pressure, and the materials of individual layers, their thickness and sequence, as well as the modes of their deposition process are designed so that the final structure has a complete list of the required qualities of chemical and thermal stability along with increased absorption qualities relative to the wavelengths of the visible part of the electromagnetic radiation spectrum.

EFFECT: invention provides an obstacle to the flow of blister formation in the metal structure of tungsten, an increase in operating temperature, as well as an increase in absorption with respect to the wavelengths of the visible part of the electromagnetic radiation spectrum.

3 cl, 13 tbl, 8 dwg