METHOD OF PREPARING THIN-FILM METAL STRUCTURE OF TUNGSTEN ON SILICON Russian patent published in 2009 - IPC H01L21/285 B82B3/00 

FIELD: physics; conductors.

SUBSTANCE: invention relates to semiconductor micro- and nanoelectronics and can be used in making integrated circuits, in making electrodes in transistors and capacitor plates, in making contacts and conduction regions on a silicon surface, as conducting, thermostable and barrier layers in metallisation systems. The method of making a thin-film metal structure of tungsten on silicon involves making a nanometer sublayer of an adhesion promoter on a silicon substrate and subsequent deposition of a thin film of tungsten through gas-phase chemical deposition through reduction of tungsten hexafluoride with hydrogen at low pressure. The adhesion promoter used is tungsten silicide W₅Si₃.

EFFECT: invention improves quality of the obtained metal structure of tungsten on silicon with simplification of the process at the same time.

3 cl, 1 dwg, 3 ex