MULTI-FREQUENCY RECUPERATIVE TRANSISTOR AMPLIFIER Russian patent published in 2022 - IPC H03F3/189 H03F1/42 

FIELD: radio engineering.

SUBSTANCE: invention relates to the field of radio engineering and can be applied in building telecommunications and radio engineering systems for various purposes, especially in the construction of input stages of receivers. Multi-frequency recuperative transistor amplifier comprises an input terminal, quadrature bridges, pairs of single-port resonant transistor amplifiers, and an output terminal. The input terminal is connected with the first input of a quadrature bridge. The fourth lead of the first quadrature bridge is connected with the first lead of the second quadrature bridge, and the fourth lead of the second quadrature bridge is connected with the first lead of the third quadrature bridge, etc. The fourth lead of the last quadrature bridge is connected with the output terminal of the multi-frequency recuperative transistor amplifier. The second and third quadrature leads of each quadrature bridge are connected with the inputs/outputs of the pair of single-port resonant transistor amplifiers. Each pair of single-port resonant transistor amplifiers is tuned to its own working frequency. The amount of quadrature bridges and, accordingly, pairs of single-port resonant transistor amplifiers is selected based on the required bandwidth of the multi-frequency recuperative transistor amplifier.

EFFECT: increase in the bandwidth of the recuperative transistor amplifier.

1 cl, 1 dwg