THERMAL UNIT OF THE PLANT FOR GROWING FLUORIDE CRYSTALS WITH CLOSE MELTING TEMPERATURES BY VERTICAL DIRECTIONAL CRYSTALLIZATION Russian patent published in 2022 - IPC C30B35/00 C30B11/00 C30B13/14 C30B15/10 C30B15/14 C30B29/12 

Abstract RU 2778808 C1

FIELD: crystal growing.

SUBSTANCE: invention relates to equipment used in the technology of growing crystals of fluoride compounds with low volatility of the initial components from the melt by vertical directional crystallization methods. The thermal unit of the plant for growing fluoride crystals with close melting temperatures by vertical directional crystallization methods contains several crucibles 1, 2, 3 with growth cells inside the growth chamber, crucibles 1, 2, 3 inside the growth chamber are arranged axisymmetrically vertically in accordance with the melting temperature of the charge, providing conditions for an increase in the melting temperature of the charge from the lower crucible 1 to the upper 3, and are rigidly fastened together by means of a threaded connection or a tight fit of the collar of the upper crucible into a groove in the lower crucible.

EFFECT: invention provides for the growth of a large concentration series (several dozen samples) in one cycle of depressurization and reloading of the growth plant, which makes it possible to increase the productivity of the growth equipment.

1 cl, 3 dwg, 1 ex

Similar patents RU2778808C1

Title Year Author Number
METHOD FOR PRODUCING CRYSTALS OF ALLOYS OF FLUORITE SOLID SOLUTIONS М1-X М'XF2, WHERE M = CA, SR, BA; M' = PB, CdD, X IS MOLE FRACTION OF VOLATILE COMPONENT M'F2 (VARIANTS) 2020
  • Karimov Denis Nurimanovich
  • Buchinskaya Irina Igorevna
  • Dymshits Yurij Meerovich
RU2742638C1
CONGRUENTLY MELTING FLUORINE-CONDUCTING SOLID ELECTROLYTE MRFWITH FLUORITE STRUCTURE FOR HIGH-TEMPERATURE THERMODYNAMIC RESEARCHES 2016
  • Sobolev Boris Pavlovich
  • Sorokin Nikolaj Ivanovich
  • Karimov Denis Nurimanovich
RU2639882C1
METHOD FOR PRODUCING EUROPIUM (II) EUF2 DIFLUORIDE CRYSTALS 2016
  • Karimov Denis Nurimanovich
  • Ilina Olga Nikolaevna
  • Ivanova Anna Gennadevna
  • Sobolev Boris Pavlovich
  • Sorokin Nikolaj Ivanovich
RU2627394C1
PROCEDURE FOR GROWING CRYSTALS BY CRUCIBLE-LESS METHOD AND DEVICE FOR ITS IMPLEMENTATION 2009
  • Gonik Mikhail Aleksandrovich
  • Gonik Mark Mikhajlovich
RU2426824C2
PROCEDURE FOR GROWTH OF CdZnTe BY METHOD OF AHF (AXIAL HEAT FRONT), WHERE 0≤x≤1 OF DIAMETRE TO 150 mm 2009
  • Golyshev Vladimir Dmitrievich
  • Bykova Svetlana Viktorovna
  • Tsvetovskij Vladimir Borisovich
RU2434976C2
CRYSTAL GROWING METHOD AND APPARATUS FOR PERFORMING THE SAME 2006
  • Smirnov Pavel Vladislavovich
RU2320791C1
METHOD OF GROWING GERMANIUM MONOCRYSTALS WITH DIAMETRE OF UP TO 150 mm USING OTF METHOD 2008
  • Golyshev Vladimir Dmitrievich
  • Tsvetovskij Vladimir Borisovich
  • Bykova Svetlana Viktorovna
RU2381305C1
CONTROL MODE OF CRYSTAL GROWTH PROCESS FROM MELT 2007
  • Gonik Mikhail Aleksandrovich
  • Gonik Mark Mikhajlovich
  • Kriger Viktor Aleksandrovich
  • Lobachev Vladimir Aleksandrovich
  • Tsvetovskij Vladimir Borisovich
RU2357023C1
METHOD OF GROWING MONOCRYSTALS-SCINTILLATORS BASED ON SODIUM IODIDE OR CAESIUM IODIDE AND DEVICE FOR IMPLEMENTING METHOD 2006
  • Golyshev Vladimir Dmitrievich
  • Gonik Mikhail Aleksandrovich
RU2338815C2
METHOD FOR GROWING CRYSTALS OF MULTICOMPONENT FLUORIDES WITH THE STRUCTURE OF FLUORITE IN MF2-CEF3 SYSTEMS 2015
  • Karimov Denis Nurimanovich
  • Kireev Vsevolod Vadimovich
  • Sobolev Boris Pavlovich
  • Ivanovskaya Natalya Albertovna
RU2659274C2

RU 2 778 808 C1

Authors

Karimov Denis Nurimanovich

Buchinskaya Irina Igorevna

Dymshits Yurij Meerovich

Koshelev Aleksandr Vladimirovich

Dates

2022-08-25Published

2021-10-22Filed