FIELD: metallurgy.
SUBSTANCE: procedure consists in growing crystals by crucible-less method on seed by drawing crystal down from melted zone in gradient of temperature with usage of growing vessel, background multi-sectional heater, additional heater in sealed case - AHB (axial heat background) -heater near front of crystallisation in contacting melted zone maintained with forces of surface tension between bottom of case of AHB-heater and crystal, and also in supply of crystallised material with feeder. Also, height of melted zone is kept within the range from 1 to 20 mm facilitating its different thickness on opposite ends of the AHB-heater within the range from 0.1 to 0.5 mm, while along whole section of growing crystal - from 0.1 to 5 mm at axial gradient of temperature within he range from 5 to 500°C/cm and radial one - within the range from 0.1 to 10°C/cm.
EFFECT: facilitation of close to flat shape of crystallisation front, of specified heat conditions on it along whole section of crystal, and also of specified composition of crystallised material, which finally increases quality of grown crystal and efficiency of mono-crystal production.
21 cl, 5 dwg, 4 ex, 1 tbl
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