FIELD: metallurgy, crystals.
SUBSTANCE: invention relates to control of the crystal growth process from the charge melt 6 in capsule 4 by method of axial heat current nearby solid-melt interface - by solid-melt -method. During the growing it is implemented the control of thermal behavior by means of regulators, connecting regulated variable with control variable. In the capacity of control variables there are used voltage at least at one of background heater sections and at one of sections immersed into the melt of solid-melt-method 2, in the capacity of measured regulated variables there are used temperatures of sections of background heater 1 TH1-TH4, temperatures T1, T2 in the bottom of solid-melt -method and bedplate of capsule T3-T5, defined by corresponding thermocouple, and in the capacity of non-measured regulated variables- temperatures of body bottom of solid-melt -method 8 Thot and capsule bedplate Tcold., which are, correspondingly, temperatures of hot solid-liquid boundary and cold crystal boundary, additionally regulatory control of the temperature is implemented at stage of capsule warming up only by thermopairs, located outside sections of background heater 1, from the beginning moment of charge melting- including and by thermopairs, which are in the capsule bedplate, and after full charge melting - also and by thermopairs in the bedplate of solid-melt heater, at that settings for corresponding temperatures T1 and T3 at stage of crystallisation is calculated before the beginning of crystallisation depending on required value of growth rate v. Invention provides required thermal behavior of crystallisation, optimal thermal conditions for crystal growing.
EFFECT: improvement of grown crystal.
15 cl, 1 dwg
