METHOD FOR PRODUCING SILICON CARBIDE POWDER Russian patent published in 2023 - IPC C01B32/956 C01B32/97 

FIELD: semiconductors.

SUBSTANCE: invention relates to a technology for producing single-crystal silicon carbide (SiC), a wide-gap semiconductor material used in power electronics, and for creating integrated circuits based on it. To obtain silicon carbide powder, silicon dioxide and carbon are mixed, the resulting mixture is placed in a vacuum furnace, the furnace is filled with an inert gas, and the mixture is subjected to heat treatment in an inert gas atmosphere, followed by annealing of excess carbon in air. In this case, the initial carbon powder of a known granulometric composition is used. The initial components are mixed in the molar ratio SiO₂:C = 1:(3.2-4.0). Heat treatment is carried out in two stages, the first of which is carried out for 4-5 hours at an inert gas pressure of 0.02-0.03 MPa and a temperature of 1600-1700°C, and the second stage of heating and exposure is carried out at a temperature of 1900-2000°C for 1-20 hours at a pressure of 0.02-0.05 MPa.

EFFECT: increased purity of the synthesized silicon carbide powder of the desired particle size distribution while reducing the cost of the method.

2 cl, 3 dwg, 4 ex