METHOD FOR PRODUCING SILICON CARBIDE FELT Russian patent published in 2021 - IPC C01B32/956 C01B32/984 

FIELD: silicon carbide felt production.

SUBSTANCE: invention relates to a method for producing silicon carbide felt, which can be used as chemically resistant filter elements, a reinforcing component for creating composite ceramic products, for the production of parts operating in oxidizing environments at high temperatures. A method for producing silicon carbide felt by vapor-phase siliconization of carbon felt in a silicon backfill with preliminary heat treatment in a drying oven for 5 hours at a temperature of 100°С, evacuation (1×10^-5 mbar) to a temperature of 1100°С, and subsequent siliconization in argon at a temperature up to 1650°С.

EFFECT: technical simplicity of the proposed method, relatively low temperature of synthesis and, accordingly, relatively low energy consumption of the process, high chemical purity of the product.

1 cl, 3 dwg