METHOD FOR PRODUCING SILICON CARBIDE Russian patent published in 2023 - IPC C04B35/626 C04B35/573 C01B32/97 

FIELD: technology for the production of silicon carbide.

SUBSTANCE: resulting silicon carbide can be used for the production of abrasive tools, refractories, high-temperature electrical heating elements and electronic components, as well as for the reduction processes of the metallurgical industry. A method for producing silicon carbide by carbothermal reduction of silicon dioxide in electric resistance furnaces involves preparing a reaction charge containing, wt.%: quartz sand 21-24, petroleum coke 17-19.5, return charge 56.5-60, unclaimed materials containing SiC 0-2.0, loading it into an electric resistance furnace and conducting reduction smelting at temperatures of 1600-2500° C. In this case, the silicon carbide content in the reaction charge must be at least 4.5%, and the iron content in the return charge must be no more than 3%.

EFFECT: use of the proposed technical solution makes it possible to increase the productivity of furnaces by 10%, reduce specific energy consumption by 19%, increase the extraction of silicon carbide by 19.9%, and reduce CO₂ emissions by 30% and more. The method makes it possible to obtain bulk SiC crystals of isometric shape. In addition, the level of volatile components such as sulfur compounds, nitrogen oxide and dioxide and others is reduced.

1 cl, 3 ex