METHOD FOR AUTOMATIC CONTROL OF ETCHING PARAMETER WHEN DETERMINING LEVEL OF RESIDUAL STRESS IN SAMPLES Russian patent published in 2024 - IPC G01B7/00 B23H7/00 

FIELD: mechanical engineering.

SUBSTANCE: installations with an automatic system for monitoring the etching parameter when determining the level of residual stresses in material samples arising after mechanical processing of metals. The method for automatically monitoring the etching parameter includes measuring the current strength arising between the test sample and the etching composition, for which the signal from the ammeter supplied to the control unit is compared with the minimum permissible current value, characterized in that, based on the current strength measurement, the gap between sample and the etching composition, while at a current value less than the minimum permissible value, the control unit turns on the drive motor, which moves the sample in the direction of reducing the gap between the test sample and the etching composition; at a current value equal to the minimum permissible value, the drive motor stops.

EFFECT: development of an effective method for automatically monitoring the etching parameter when determining the level of residual stresses in samples, achieving the following effect: increasing the accuracy of measurements due to automated control of the gap between the sample and the etching composition.

1 cl, 1 dwg