PHOTOSENSITIVE COMPOSITION AND METHOD FOR ITS PRODUCTION Russian patent published in 2024 - IPC H01L31/18 

Abstract RU 2821170 C1

FIELD: materials for photographic devices.

SUBSTANCE: method of making a photosensitive composition involves holding a silicon substrate in a solution for precipitating lead sulphide containing a lead (II) salt, sodium citrate, thiourea and ammonium hydroxide, wherein for deposition of lead sulphide silicon substrate is preliminarily degreased in NaHCO3 solution and treated in 35% KOH solution at room temperature for 5 minutes, then held in solution for precipitation of lead sulphide, additionally containing ammonium chloride additive, at pH 12 and temperature of 80°C. Photosensitive composition contains a lead sulphide film with thickness of 0.5 to 1 mcm, the lead sulphide film on silicon is represented by uniformly distributed crystals with an average face size of 0.5 to 0.7 mcm.

EFFECT: invention provides high photosensitivity and photoelectric effect of silicon while maintaining its composition up to temperature of 150°C.

2 cl, 2 dwg

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RU 2 821 170 C1

Authors

Abdurakhimova Raiana Kakhorovna

Tulenin Stanislav Sergeevich

Leonova Nataliia Maksimovna

Leonova Anastasiia Maksimovna

Shmygalev Aleksandr Sergeevich

Suzdaltsev Andrei Viktorovich

Dates

2024-06-17Published

2023-09-27Filed