FIELD: materials for photographic devices.
SUBSTANCE: method of making a photosensitive composition involves holding a silicon substrate in a solution for precipitating lead sulphide containing a lead (II) salt, sodium citrate, thiourea and ammonium hydroxide, wherein for deposition of lead sulphide silicon substrate is preliminarily degreased in NaHCO3 solution and treated in 35% KOH solution at room temperature for 5 minutes, then held in solution for precipitation of lead sulphide, additionally containing ammonium chloride additive, at pH 12 and temperature of 80°C. Photosensitive composition contains a lead sulphide film with thickness of 0.5 to 1 mcm, the lead sulphide film on silicon is represented by uniformly distributed crystals with an average face size of 0.5 to 0.7 mcm.
EFFECT: invention provides high photosensitivity and photoelectric effect of silicon while maintaining its composition up to temperature of 150°C.
2 cl, 2 dwg
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