LOW-TEMPERATURE METHOD OF PRODUCING POLYCRYSTALLINE SILICON Russian patent published in 2024 - IPC C01B33/23 

FIELD: various technological processes.

SUBSTANCE: invention relates to production of powdered polycrystalline silicon and can be used in solar power engineering and electronics. Disclosed is a low-temperature method of producing polycrystalline silicon, involving thermal reduction of silicon-containing compounds to elementary silicon using finely dispersed aluminium, characterized by that synthesis is carried out using aluminium-induced crystallisation of products of liquid polyethylhydrosiloxane oligomer with content of 5 to 10 wt.%. of Al powder; polyethylhydrosiloxane liquid and aluminium powder are mixed for at least 2 minutes, then the mixture is heated with constant stirring in an air medium in a stainless steel container to temperature of 250-260 °C and held for at least 60 minutes, after which the obtained mixture is cooled to room temperature, the powder is ground in a mill and annealed in a muffle furnace at temperature of 550-600 °C for at least 35 hours.

EFFECT: invention is aimed at improving processability due to reduction of temperature of synthesis of powder of polycrystalline silicon, which will make it possible to create polycrystalline systems and to expand field of application of technology.

1 cl, 2 dwg, 1 ex