FIELD: silicon carbide powder production.
SUBSTANCE: invention relates to a method for producing highly dispersed silicon carbide powder used for the manufacture of products that are widely used in various industries. Carbon felt is placed in layers in a graphite crucible with silicon powder and preliminarily heat-treated in an oven for 5 hours at a temperature of 100°C, additionally heat-treated in a muffle furnace for 4 hours at a temperature of 400°C, placed in a vacuum furnace, evacuated to 1°C 10-5 mbar, heated to a temperature of 700°C at a heating rate of 5°C/min. Then the furnace chamber is filled with argon to an overpressure of 0.2 atm, and siliconization is carried out in argon at temperatures up to 1550°C for 120 min. A powder of grain composition from 0.2 to 1 micron is obtained.
EFFECT: increasing the chemical purity of silicon carbide powder.
1 cl, 3 dwg, 1 ex
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