FIELD: chemistry.
SUBSTANCE: invention relates to chemical engineering and can be used in making solar panels. Method of producing silicon metal involves grinding sand with silicon dioxide content of not less than 98% to powdered state with particle size of not more than 1 mcm. Obtained silicon dioxide powder is blown into a plasma treatment device using excess hydrogen at a feed rate of 1 m3/h to 2 m3/h and mixed with gaseous two-element gas-reducing agent, represented by a mixture of "pure oxygen-hydrogen" in ratio 1 mol. O2 : 2 mol. H. When mixture components interact with each other, part of oxygen burns, raising heating temperature to 1400–1600 °C and a portion of the hydrogen is used to reduce silicon.
EFFECT: invention enables to obtain chemically pure silicon metal.
1 cl
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