FIELD: electronics. SUBSTANCE: this resistive material for posistors containing bismuth and vanadium oxides is injected with Bi21/16 V5/6 Mn1/6O5/2/3. For manufacture of thermoresistive material there are prepared several mixtures which compositions and properties are shown in table in comparison with prototype. Table is specified in description of invention. Produced thermoresistive material has positive temperature coefficient of resistance within interval 292-330 C and has negative temperature coefficient of resistance above and below this interval. EFFECT: increased positive temperature coefficient of resistance within temperature interval 296-312 C which enables parameters of posistors to be improved. 1 tbl
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Authors
Dates
1995-12-27—Published
1984-10-11—Filed