PHOTODETECTOR Russian patent published in 1996 - IPC

FIELD: optical electronics. SUBSTANCE: device has plate of ferroelectric, which is covered by semiconductor film. Point electrode is applied over semiconductor. Lower side of ferroelectric plate is covered with second electrode. High potential barrier which is caused by rest polarization charge in ferroelectric results in possibility of efficient separation of charge carriers which are generated in semiconductor. Device may be used in devices which detect, count, stores optical signals. EFFECT: increased sensitivity without increased power consumption. 1 dwg