FIELD: physics.
SUBSTANCE: infrared multispectral radiation detector comprises multiple photosensitive elements with optical filters placed in front of said elements, wherein all photosensitive elements and optical filters have a single optical axis. The photosensitive elements are made of the same composition of semiconductor material in a single process cycle on a single substrate with a topology which represents a plurality of alternating photosensitive regions and current-conducting electrodes, in the form of concentric circles, and the optical filters are made on another substrate in the form of thin-film multilayer interference structures which are a plurality of concentric circles with a topology identical to that of the photosensitive elements.
EFFECT: high sensitivity of multispectral radiation detectors.
3 cl, 1 tbl, 1 dwg
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Authors
Dates
2015-02-10—Published
2013-07-10—Filed