PROCESS OF MANUFACTURE OF INTEGRATED-CIRCUIT TRANSISTOR Russian patent published in 1996 - IPC

FIELD: microelectronics. SUBSTANCE: refers to manufacture of integrated circuits of high integration degree. In agreement with process of manufacture of integrated -circuit transistors first latent layer of second type of conductance is formed in silicon substrate of first type of conductance, epitaxial layer of second type of conductance is grown and combined insulation is formed. Then first layer of polycrystalline silicon and film of silicon nitride are cooled, first layer of polycristalline silicon is oxidized and passive base is formed. After this dielectric film, windows for emitter are formed, then dielectric film is formed anew and is removed by ion-reactive etching from bottom sections of silicon. Subsequent pricipitation of second layer of polycrystalline silicon is performed till planarity of entire working surface of semiconductor structure is achieved. After this second layer of polycrystalline silicon is etched till its surface is levelled with surface of first layer of polycrystalline silicon in emitter window. Later regions of active base and emitter are formed, dielectric film is etched away from horizontal surface of first layer of polycrystalline silicon and contacts are formed. Given process makes it possible to realise transistor structure of high integration degree with the use of one photomask thanks to maskless selective etching of second layer of polycrystalline silicon and silicon oxide. EFFECT: enhanced density of arrangement of elements of integrated circuits due to reduced interelectrode distances and decreased number of photlithographic operations because of subsequent etching of second layer of polycrystalline silicon and dielectric film without use of photolithography. 5 dwg