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1 384 106

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Application

4009622/25, 1985-11-12

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Actual filing date

1985-11-12

(45)

Published

1995-11-10

(72)

Inventor

Gitlin V.R.Kadmenskij S.G.Vakhtel' V.M.Ivakin A.N.Ostroukhov S.S.

MANUFACTURING PROCESS FOR MIS LARGE-SCALE INTEGRATED CIRCUITS Russian patent published in 1995 - IPC

Abstract SU 1384106 A2

FIELD: microelectronics. SUBSTANCE: in the course of manufacture, threshold voltage of MIS transistors is adjusted by irradiation with X-rays at quantum energy of 100 keV and dose rate determined from formula D = αΔUn/d2, where α = 6·10-6P·cm2/В; ΔUn is threshold voltage adjustment value, V; d thickness of subgate oxide, cm. This procedure is followed by annealing at 450 C for 60 min. Improved parameters are attained due to elimination of effect of movable charge in oxide and at oxide-substrate interface on transistor parameters. EFFECT: increased output of serviceable MIS LSICs, improved reliability and stability of their characteristics.

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SU 1 384 106 A2

Authors

Gitlin V.R.

Kadmenskij S.G.

Vakhtel' V.M.

Ivakin A.N.

Ostroukhov S.S.

Dates

1995-11-10—Published

1985-11-12—Filed

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