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1 762 688

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Application

4859925/25, 1990-05-21

(22)

Actual filing date

1990-05-21

(45)

Published

1995-08-20

(72)

Inventor

Gitlin V.R.Ivakin A.N.Kadmenskij S.G.Levin M.N.Ostroukhov S.S.Tatarintsev A.V.

PROCESS OF MANUFACTURE OF MIS LARGE-SCALE INTEGRATED CIRCUITS Russian patent published in 1995 - IPC

Abstract SU 1762688 A1

FIELD: semiconductor technology. SUBSTANCE: MIS large-scale integrated circuit is manufactured by well known technology, is irradiated with ultraviolet radiation for adjustment of threshold voltage. Different groups of MIS structures (for instance, n- and p-channel transistors) in HEMOS require in common case equal value of adjustment ΔV1 and ΔV2. Condition that relation between adjustment coefficients K1 and K2 depends on ratio of intensities of ultraviolet and X-ray radiations Iul/Ix-ray is used. Processing from experimental dependences K1=f1(Iul/Ix-ray) and K2= f2(Iul/Ix-ray) value Iul/Ix-ray is set at which relation K1/K2=ΔV2/ΔV1 is realized. Dosage of X-ray radiation is established equal to D = K1ΔV1= K2ΔV2. EFFECT: enhanced operational reliability of manufactured MIS LSI circuits. 4 dwg

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SU 1 762 688 A1

Authors

Gitlin V.R.

Ivakin A.N.

Kadmenskij S.G.

Levin M.N.

Ostroukhov S.S.

Tatarintsev A.V.

Dates

1995-08-20—Published

1990-05-21—Filed

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