METHOD FOR MANUFACTURING OF FIELD-EFFECT TRANSISTOR Russian patent published in 1995 - IPC

Abstract SU 1419418 A1

FIELD: electronic devices. SUBSTANCE: method involves forming areas of source, drain and under-gate dielectric on silicon base, forming metal conductors, tuning threshold voltage Vth by means of exposition to X-ray radiation which level is proportional to ΔVth. Base having generated structures is exposed to given level of radiation together with its heating to temperature of 400-500 C. EFFECT: facilitated manufacturing, increased stability to temperature. 2 cl

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Authors

Vakhtel' V.M.

Gitlin V.R.

Evseev I.I.

Ivakin A.N.

Kadmenskij S.G.

Levin M.N.

Ostroukhov S.S.

Stojanov A.I.

Dates

1995-06-09Published

1987-01-12Filed