FIELD: electronic devices. SUBSTANCE: method involves forming areas of source, drain and under-gate dielectric on silicon base, forming metal conductors, tuning threshold voltage Vth by means of exposition to X-ray radiation which level is proportional to ΔVth. Base having generated structures is exposed to given level of radiation together with its heating to temperature of 400-500 C. EFFECT: facilitated manufacturing, increased stability to temperature. 2 cl
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Authors
Dates
1995-06-09—Published
1987-01-12—Filed