MOS TRANSISTOR MANUFACTURING PROCESS Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: in MOS transistor manufacture, polysilicon gate electrode is formed upon molding field-effect oxide. To this end, first layer of silicon dioxide, polysilicon, silicon nitride, second layer of silicon dioxide are applied to silicon substrate surface with formed silicon dioxide-silicon nitride structure in definite succession; groove is formed in these layers that follows shape of gate electrode and equals in depth its thickness; polysilicon walls of groove are oxidized, then groove bottom is cleaned of silicon nitride and silicon dioxide layers and in their place subgate oxide is formed; then polysilicon layer is applied, its thickness being equal to that of gate electrode; polysilicon layer is planarized against groove upper edge level, polysilicon layer surface in groove is thermally oxidized, then second layer of silicon dioxide, layer of silicon nitride, polysilicon layer, first layer of silicon dioxide, silicon nitride and silicon dioxide layers outside of gate electrode are removed in succession; then drain and source regions are formed by using ion alloying method, silicon dioxide is removed from gate electrode surface, titanium layer is deposited, siliconizing annealing is carried out, and non-reacting titanium is chemically removed. EFFECT: facilitated procedure. 13 dwg