FIELD: semiconductor technology. SUBSTANCE: process refers to manufacture of silicon integrated circuits. Layer of silicon nitride is deposited on silicon substrate. Windows for field regions are open in it. Counterinversion doping of them is performed. Then field oxide of increased thickness is grown, silicon nitride is removed and active regions are formed with use of photoresistive mask. Salient feature of this operation is overlapping of sections of substrate adjacent to counterinversion layers by photoresistive mask which excludes contact between active and counterinversion regions. Further on undergate silicon oxide, polysilicon elements, insulating layer, contact metallization and interconnections are formed. Finally surface of structure is passivated. Given process makes it possible to manufacture integrated circuits with enhanced level of supply voltage thanks to increase in break-through voltages of active regions and threshold voltages of parasitic regions and of threshold voltages of parasitic transistors. EFFECT: improved operational characteristics. 3 dwg
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