METHOD OF DETERMINATION OF CRYSTALLOGRAPHIC INHOMOGENEITY OF SEMICONDUCTOR CRYSTALS Russian patent published in 1996 - IPC

FIELD: electronics. SUBSTANCE: crystallographic surfaces of crystal are oriented and crystal is dipped into dielectric fluid. High voltage pulses are applied by means of two electrodes, one of them being needle-shaped. Stream discharges are excited in crystal which are registered visually or by photographic method. Registration is performed from side of two surfaces of crystal simultaneously. Presence, arrangement and dimensions of blocks in structure are judged by breakage angles and coordinates of breakage points of paths of stream discharges obtained at different positions of saw-shaped electrode over surfaces of crystal. EFFECT: increased informativity of determination of block structure of crystal.