PHOCON SEMICONDUCTOR ELECTRIC-DISCHARGE LASER Russian patent published in 2015 - IPC H01S3/00 

Abstract RU 2541417 C1

FIELD: electricity.

SUBSTANCE: phocon semiconductor electric-discharge laser (PSEDL) comprises high-voltage nanopulser, transmitting line, chamber with electrodes and laser target, the chamber consists of two sections divided by partition of dielectric material with opening in the centre and filled with gas (air, nitrogen, helium, etc.), which pressure is set within limits of 0.1-5 Torr; laser target consists of conical fibre guide (focon) and plane-parallel semiconductor plate fixed at the cone peak.

EFFECT: potential improvement of directional property of laser radiation, improved image of the near-field.

6 cl, 2 dwg

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Authors

Nasibov Aleksandr Sergeevich

Bagramov Vladimir Georgievich

Berezhnoj Konstantin Viktorovich

Shapkin Petr Vasil'Evich

Dates

2015-02-10Published

2013-11-05Filed