METHOD FOR REFINEMENT OF SUBSTRATE ORIENTATION FOR DIAMOND EPITAXY Russian patent published in 2015 - IPC H01L21/302 

FIELD: chemistry.

SUBSTANCE: in a method of refining orientation of a diamond monocrystalline substrate during filing and polishing, said substrate being mounted by a face-plate on a spindle of a composite device, with possibility of smooth turning on a vernier about an axis in two mutually perpendicular directions with fixation, adjustment of the misalignment angle of the growth surface with a diffraction plane is carried out without removing the crystal on a narrow section, the area which is in the range of 1-5% of the total area of the face of the substrate to be refined, using intermediate measurement methods which do not require X-ray diffraction and repolishing of the entire growth surface, which provides better quality, saves time and enables to conduct refinement with accuracy defined by the division value of the vernier.

EFFECT: high quality, saving time when refining orientation of growth surface of substrates for diamond epitaxy with accuracy of the angle of misalignment with a diffraction angle of 12 angular minutes, by polishing at the edge of the substrate of the correcting area.

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