FIELD: nondestructive investigation methods of materials. SUBSTANCE: high-frequency harmonic current signal and constant voltage are applied in compliance with method to contact of semiconductor with metal or electrolyte and amplitude of demodulated low-frequency voltage signal which is inversely proportional to value of concentration of impurity in sample is measured. Thanks to great separation of low-frequency and high-frequency signals task of extraction of weak low-frequency signal of nonlinear response carrying information on concentration is considerably facilitated. EFFECT: increased precision and resolving power of measurement of profile, provision for capability of investigation of high-resistance semiconductors and simplification of method. 3 dwg
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