SEMICONDUCTOR DEVICE Russian patent published in 1999 - IPC

FIELD: microelectronics. SUBSTANCE: device may be made in the form of voltage- controlled variable capacitor, varicap, or transistor. It may carry voltage-controlled transmission lines. Semiconductor device has low-conductance or insulating layer 5 with conductive section 6 formed on one of its surfaces and n or p layer 1 on its other surface with ohmic contact whose surface bears second semiconductor and/or metal layer 2 that forms p-n junction with layer 1 and/or Schottky barrier with other ohmic contact; selection of doping profile and thickness of layer 1 is limited by condition of complete depletion of layer 1 or its part with majority charge carriers up to breakdown of p-n junction or Schottky barrier when external bias is applied to it: , where Ui is breakdown voltage of semiconductor layer 1; Y is coordinate taken from metal boundary of p-n junction or Schottky barrier along thickness of layer 1; q is elementary charge; Ni(x, y,z) is dope profile in layer 1; d(x,y) is thickness of layer 1; z, x are coordinates on film surface; ε_s - is dielectric constant of layer 1; U_k is dielectric constant of layer 1; Uk is built-in potential. The p-n junction or Schottky barrier may be formed with heterogeneous dope profile along X coordinate chosen on surface of layer 1; conducting cavities 3 are made on surface of semiconductor layer 1 along other axis Z which form, together with layer 1, non-rectifying contact; they are either connected through ohmic contact to layer 1 or are arranged in a spaced relation to ohmic contact, strip 3, or connected to conducting sections 4 made on free surface of layer 5; or layer 5 is formed above strips 3. EFFECT: provision for adjusting value of capacitor formed between conducting strips or resistance of low-conductance semiconductor layer in response to control voltage variation. 3 cl, 21 dwg