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2 393 584

(13)

(51)

IPC

H01L21/66(2006-01-01)

(21) (22)

Application

2009112263/09, 2009-03-30

(24)

Start date

2009-03-30

(22)

Actual filing date

2009-03-30

(45)

Published

2010-06-27

(72)

Inventor

Grokhotkov Ivan NikolaevichJafjasov Adil' MalikovichFilatova Elena OlegovnaBozhevol'Nov Vladislav Borisovich

(73)

Holder

Federal'Noe Gosudarstvennoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Sankt-Peterburgskij Gosudarstvennyj Universitet

METHOD OF REINFORCEMENT ADDITIVE CONCENTRATION DETERMINATION IN SEMICONDUCTORS Russian patent published in 2010 - IPC H01L21/66

Abstract RU 2393584 C1

FIELD: electricity.

SUBSTANCE: method involves selection of work range of electrode potentials: in anode area it is potential at which surge of current specified by dissolution reaction in subsurface semiconductor layer starts; in cathode it is potential at which electropuncture of semiconductor-electrolyte border occurs. Electrode potential, high-frequency differential capacitance of semiconductor-electrolyte system and polarisation current are measured.

EFFECT: improved measurement reliability, extended range of subsurface sample layer depth where reinforcement additive concentration can be determined.

3 cl, 6 dwg, 3 ex

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RU 2 393 584 C1

Authors

Grokhotkov Ivan Nikolaevich

Jafjasov Adil' Malikovich

Filatova Elena Olegovna

Bozhevol'Nov Vladislav Borisovich

Dates

2010-06-27—Published

2009-03-30—Filed