METHOD FOR DETERMINING THE DEPTH DISTRIBUTION PROFILE OF MAJOR CHARGE CARRIER CONCENTRATION IN SEMICONDUCTOR HETEROSTRUCTURES Russian patent published in 2023 - IPC H01L21/66 

FIELD: microelectronics.

SUBSTANCE: method for determining the distribution profile of the concentration of the main charge carriers in depth in semiconductor heterostructures according to the invention, capacitance measurements are carried out on the surface of the semiconductor heterostructure and additionally etching is carried out for each functional layer of the structure, the dependence of capacitance on voltage in a non-stationary mode and the dependence of the dielectric loss tangent on voltage are measured, determine the “profiling window” at a given depth, at which the maximum allowable value of the dielectric loss tangent is 0.2, then the non-stationary capacitance-voltage characteristic is recalculated into a local profile of the distribution of the concentration of the main charge carriers over the depth of the heterostructure by differentiating the nonstationary capacitance-voltage characteristic by voltage in the “profiling window” area. Then, by superposition of local profiles of the distribution of the concentration of the main charge carriers, they are combined, taking into account the shift in depth along the coordinate of each local profile to the corresponding etching depth, and the desired profile of the distribution of the concentration of the main charge carriers over the depth of the heterostructure is obtained.

EFFECT: increasing the accuracy of determining the concentration of charge carriers.

2 cl, 6 dwg