TRANSISTOR-TRANSISTOR LOGIC GATE Russian patent published in 1994 - IPC

Abstract SU 1679943 A1

FIELD: communications-electronic equipment. SUBSTANCE: transistor-transistor logic gate has emitter-coupled transistor, phase-splitting transistor, first and second transistors of output emitter-followers, output load transistor, discharging transistor, six resistors and additional two-diode element which may be realized as emitter-base transistors, or as additional emitter-base junctions of phase-splitting and input emitter-coupled transistors. EFFECT: increased stability of transistor-transistor logic gate performance. 2 dwg

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SU 1 679 943 A1

Authors

Golubev N.F.

Latyshev A.V.

Lomako V.M.

Nozhnov A.A.

Ogurtsov G.I.

Prokhotskij Ju.M.

Dates

1994-07-30—Published

1989-10-11—Filed