TRANSISTOR-TRANSISTOR LOGIC GATE Russian patent published in 1994 - IPC

FIELD: communications-electronic equipment. SUBSTANCE: transistor-transistor logic gate has emitter-coupled transistor, phase-splitting transistor, first and second transistors of output emitter-followers, output load transistor, discharging transistor, six resistors and additional two-diode element which may be realized as emitter-base transistors, or as additional emitter-base junctions of phase-splitting and input emitter-coupled transistors. EFFECT: increased stability of transistor-transistor logic gate performance. 2 dwg