MICROPOWER LOGIC ELEMENT WITH LOADING CAPACITY Russian patent published in 2001 - IPC

Abstract RU 2172064 C2

FIELD: pulse and digital equipment, integrated logic elements of LSI circuits and computers. SUBSTANCE: technical objective of invention consists in development of micropower logic AND, OR gates with little number of components, of former- follower providing: for low-voltage logic differential in subhalf-volt range up to 0.2 V with highest loading capacity along both fronts, for high functional capabilities, for little number of components for LSI circuits. It is achieved as micropower logic element with high loading capacity has input transistors of first type conductance whose collectors are connected to first supply bus, whose bases are connected to proper inputs and emitters are connected to base of matching transistor of second type conductance and to collector of transistor of first type conductance of first current generator. Emitter of matching transistor is connected to second transistor current generator, collector of matching transistor is connected to base of transistor of first type conductance of first current generator and base and collector of transistor of first type conductance in diode switching on which emitter is connected to emitter of transistor of first type conductance of first current generator and second supply bus. Emitter of matching transistor is connected to output of element and emitter of transistor of first type conductance of second current generator whose collector is connected to base and collector of transistor of second type conductance in diode switching on and to base of first additional transistor of second type conductance which emitter is connected to emitter of transistor of second type conductance in diode switching on and to first bus and which collector is connected to base of transistor of first type conductance and to emitter of second additional transistor of second type conductance. Its collector is connected to second supply bus and base is connected to emitter of third additional transistor of second type conductance and to collector of fourth additional transistor of second type conductance whose emitter is connected to first supply bus and whose base is connected to third supply bus. Base of third additional transistor is connected to base of matching transistor and collector is connected to second supply bus. EFFECT: high functional capabilities of logic element. 5 cl, 7 dwg

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RU 2 172 064 C2

Authors

Bubennikov A.N.

Dates

2001-08-10Published

1999-11-04Filed