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1 715 068

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A1

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IPC

(21) (22)

Application

4805555/25, 1990-03-21

(22)

Actual filing date

1990-03-21

(45)

Published

1994-02-28

(72)

Inventor

Sotnikov V.T.Andrjushchenko L.A.Gershun A.S.Budakovskij S.V.Gritsan V.A.

(73)

Holder

Institut Monokristallov An Ukrainy

MANUFACTURING TECHNIQUE FOR PARATERPHENYL MONOCRYSTAL BASE SCINTILLATION DETECTORS Russian patent published in 1994 - IPC

Abstract SU 1715068 A1

FIELD: spectrometry. SUBSTANCE: oligoorgano-siloxane hydride is used as polishing liquid and isothermal annealing is made at 100 to 120 C for 2 to 2.5 h with layer of high-molecular polyorgano-siloxane rubber having molecular mass of (6-9)·105 applied to polished end of scintillator, this layer being removed just before scintillator is packed in case. This method enables production of scintillator detectors having energy resolution 10% better than that of known devices. EFFECT: improved scintillation characteristics of detectors and their resistance to mechanical and environmental effects. 4 tbl

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SU 1 715 068 A1

Authors

Sotnikov V.T.

Andrjushchenko L.A.

Gershun A.S.

Budakovskij S.V.

Gritsan V.A.

Dates

1994-02-28—Published

1990-03-21—Filed

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